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MDS5951– Dual N-Channel Trench
MOSFET
MDS5951
Dual N-Channel Trench
MOSFET 60V, 4.
5A, 50mΩ
General Description
The MDS5951 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.
Features
VDS = 60V ID = 4.
5A @VGS = 10V RDS(ON) 50mΩ @ VGS = 10V 60mΩ @ VGS = 4.
5V
Applications
Inverters General purpose applications
5(D2) 6(D2) 7(D1) 8(D1)
D1
D2
2(G1) 1(S1)
4(G2) 3(S2)
G1
G2
S1
S2
Absolute Maximum Ratings (TA =25oC unless otherwise noted)
Characteristics Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 3) TA=25oC TA=70 C Junction and...