MDS9651– Complementary N-P Channel Trench
MOSFET
MDS9651
Complementary N-P Channel Trench
MOSFET
General Description
The MDS9651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Features
N-Channel VDS = 30V ID = 6.
9A @ VGS = 10V RDS(ON) 28mΩ @ VGS = 10V 42mΩ @ VGS = 4.
5V P-Channel VDS = -30V ID = -6.
0A @ VGS = -10V RDS(ON) 35mΩ @ VGS = -10V 55mΩ @ VGS = -4.
5V
Applications
Inverters General purpose applications
5(D2) 6(D2) 7(D1) 8(D1)
D1
D2
4(G2) 3(S2) 2(G1) 1(S1)
G1
G2
S1
S2
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics Drain-Source
Voltage Gate-Source
Voltage Cont...