ME08N20/ME08N20-G
N- Channel 200V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology.
This high density process is especi ally tailored to minimize on-state resist ance.
These dev ices are p articularly su ited for lo w volt age appl ication su ch as LCD i nverter, compute r po wer management and DC to DC converter circu its which need low in-line power loss.
FEATURES
● RDS(ON)≦0.
4Ω@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Po wer Management ● DC/DC Converte...