ME100N03T /ME100N03T-G
N- Channel 30V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦3mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
* The Ordering Information: ME100N03T /ME100N03T-G (Green product-Halogen free )
Absolute Maximum Ratin...