N- Channel 40V (D-S)
MOSFET
ME200N04T / ME200N04T-G
GENERAL DESCRIPTION
The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
● RDS(ON)≦3.
5mΩ@VGS=10V ● RDS(ON)≦4.
7mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
e Ordering Information: ME200N04T (Pb-free)
ME200N04T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃...