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ME25N10F

N-Channel MOSFET

Description

ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦...


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