N-Channel 40-V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME4456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
ME4456/ME4456-G
FEATURES
● RDS(ON)≦24mΩ@VGS=10V ● RDS(ON)≦39mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON)...