N- and P-Channel 40-V Power
MOSFET
GENERAL DESCRIPTION
The LT4565 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
ME4565
FEATURES
● RDS(ON)≦40mΩ@VGS=10V (N-Ch) ● RDS(ON)≦45mΩ@VGS=4.
5V (N-Ch) ● RDS(ON)≦54mΩ@VGS=-10V (P-Ch) ● RDS(ON)≦60mΩ@VGS=-4.
5V(P-...