N- and P-Channel 60-V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME4566 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4566/ME4566-G
FEATURES
● RDS(ON)≦34mΩ@VGS=10V (N-Ch) ● RDS(ON)≦42mΩ@VGS=4.
5V (N-Ch) ● RDS(ON)≦66mΩ...