Dual N-Channel 100-V (D-S)
MOSFET
ME4950/ME4950-G
GENERAL DESCRIPTION
The ME4950 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
● RDS(ON)≦115mΩ@VGS=10V
● RDS(ON)≦137mΩ@VGS=4.
5V
● Super high density cell des...