Dual N- Channel 100V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME4954 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4954/ME4954-G
FEATURES
● RDS(ON)≦80mΩ@VGS=10V ● RDS(ON)≦98mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON...