ME60N03/ME60N03-G
-g30V N-Channel Enhancement Mode
MOSFET
GENERAL DESCRIPTION
The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
FEATURES
● RDS(ON)≦8.
5mΩ@VGS=10V ● RDS(ON)≦13mΩ@VGS=4.
5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● D...