Dual N-Channel 20-V (D-S)
MOSFET
ME6970D/ME6970D-G
GENERAL DESCRIPTION
The ME6970D Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TSSOP-8) Top View
FEATURES
● RDS(ON)≦22mΩ@VGS=4.
5V
● RDS(ON)≦23mΩ@VGS=4.
0V
● RDS(ON)≦26mΩ@VGS=3.
0V
● RDS(ON...