N-Channel 30V (D-S)
MOSFET
GENERAL DESCRIPTION
The ME7356-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
ME7356-G
FEATURES
● RDS(ON)≦5mΩ@VGS=10V ● RDS(ON)≦6.
2mΩ@VGS=4.
5V ● Super high density cell design for extremely low R...