ME7609D/ME7609D-G
P-Channel 30-V (D-S)
MOSFET, ESD Producted
GENERAL DESCRIPTION
The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON) ≦19.
5mΩ@VGS=-10V
● RDS(ON) ≦40mΩ@VGS=-4.
5V
APPLICATIONS
● Power Management in Note book ● Portable Equ...