N-Channel 60V(D-S) Enhancement
MOSFET
GENERAL DESCRIPTION
The ME7646-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6 Top View
ME7646/ME7646-G
FEATURES
● RDS(ON)≦8mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptio...