N-Channel Enhancement
Mosfet , ESD Protected
ME7804-G
GENERAL DESCRIPTION
The ME7804-G N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON) ≦16mΩ@VGS=10V ● RDS(ON) ≦25mΩ@ VGS=4.
5V
APPLICATIONS
● Power Management in Note book ● Po...