MEBSS138/MEBSS138-G
N - Channel 50V (D-S)
MOSFET
GENERAL DESCRIPTION
The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦3.
5Ω@VGS=5V ● RDS(ON)≦7Ω@VGS=2.
75V ● Super high density cell design f...