MEBSS138DK/MEBSS138DK-G
N-Channel 50V (D-S)
MOSFET, ESD Protection
GENERAL DESCRIPTION
The MEBSS138DK is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦3.
5Ω@VGS=10V
● RDS(ON)≦4Ω@VGS=4.
5V
● Super high density cell design for extremely low RDS(ON)
●...