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Part Number
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MEF64M16G150M3ND |
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Manufacturer
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Elisra |
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Description
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1024Mbit 3.3V - NAND Flash Memory Module |
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Published
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Sep 6, 2018 |
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Detailed Description
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MEF64M16XX50X3ND
1024Mbit 3.3V – NAND Flash Memory Module
64MX16 3.3V NAND Flash Memory Module
Features
q 3.3V±10% Sup...
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Datasheet
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MEF64M16G150M3ND
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Overview
MEF64M16XX50X3ND
1024Mbit 3.
3V – NAND Flash Memory Module
64MX16 3.
3V NAND Flash Memory Module
Features
q 3.
3V±10% Supply/ Programming q Access Time: 50ns (Page Read) q Fast Page Write Cycle Time (200uSec ) q Package type:
66-Pin Ceramic PGA 1.
385” SQ 66-Pin Ceramic PGA 1.
080” SQ
q 60mA typical erase/program current q 60mA active read current q Embedded Program/Erase Algorithms q Industrial & Military Screening q 100,000 Erase/Program Cycles
Product Description
The MEF64M16ND is a 1024Megabit 3.
3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce.
Flowcharts of programming, byte write, block erase and other specifica...
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