Part Number
|
MF1011B900Y |
Manufacturer
|
Philipss |
Description
|
Microwave power transistor |
Published
|
Apr 29, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
MF1011B900Y Microwave power transistor
Product specification Supersedes data of Dece...
|
Datasheet
|
MF1011B900Y
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
MF1011B900Y Microwave power transistor
Product specification Supersedes data of December 1994 1997 Feb 18
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circui...
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