TOSHIBA GTR Module Silicon N Channel IGBT
MG100J6ES50
High Power Switching Applications Motor Control Applications
MG100J6ES50
Unit: mm
l The electrodes are isolated from case.
l High input impedance.
l 6 IGBTs built into 1 package.
l Enhancement-mode.
l High speed : tf = 0.
30µs (Max) (IC = 100A) trr = 0.
15µs (Max) (IF = 100A)
l Low saturation
voltage : VCE (sat) = 2.
70V (Max) (IC = 100A)
Equivalent Circuit
JEDEC EIAJ TOSHIBA
Weight: 505g (Typ.
)
― ― 2-94A2A
000707EAA1
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