TOSHIBA IGBT Module Silicon N Channel IGBT
MG150J1BS11
MG150J1BS11
High Power Switching Applications Motor Control Applications
Unit: mm
l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter
voltage
Gate-emitter
voltage
Collector current
DC 1ms
Collector power dissipation
Junction temperature
Storage temperature range
Isolation
voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP PC Tj Tstg
VIsol
―
JEDEC JEITA TOSHIBA
Rating
600 ±20 150 300 450 150 −40 to 125 2500 (AC 1 min.
) 2/3
Unit V V
A
W °C °C V N·m
― ― 2-33F2A
1 2003-04-11
Electrical Characteristics (Ta = 25°C)
Cha...