MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band
amplifiers.
OUTLINE DRAWING
Unit:millimeters
FEATURES
• High output power P1dB=38dBm(TYP.
) • High power gain GLP=11dB(TYP.
) • High power added efficiency ηadd=45%(TYP.
) @f=2.
3GHz,P1dB=20dBm @f=2.
3GHz,Pin=20dBm
2
1
@f=2.
3GHz
2
0.
6±0.
2 ø2.
2
3
APPLICATION
For UHF Band power
amplifiers
5.
0
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=10V • ID=1.
3A • Rg=100Ω • Refer to Bias Procedure
9.
0±0.
2 14.
0
1 GATE 2 SOURCE 3 DRAIN
GF-7
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol VGSO VGDO ID IGR IGF PT Tch Tstg
*1:TC=25˚...