Preliminary
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band
amplifiers.
MITSUBISHI SEMICONDUCTORGaAs FET
MGF0918A
L & S BAND GaAs FET [ SMD non – matched ]
FEATURES
· High output power Po=27dBm(TYP.
) @f=1.
9GHz,Pin=8dBm · High power gain Gp=20dB(TYP.
) @f=1.
9GHz · High power added efficiency hadd=45%(TYP.
) @f=1.
9GHz,Pin=8dBm · Hermetic Package
APPLICATION
· For UHF Band power
amplifiers
Fig.
1
QUALITY
· GG
RECOMMENDED BIAS CONDITIONS
· Vds=10V · Ids=150mA · Rg=1kW
Delivery
Tape & Reel
(Ta=25°C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown
voltage
Ratings
-15 -15 400 -1.
2 5.
0 3 175 -65 to +175
Unit
V V mA mA...