Low Noise GaAs HEMT
MGF4941CL
Micro-X type plastic package
DESCRIPTION
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band
amplifiers.
The MGF4941CL is designed for automotive application and AEC-Q101 qualified.
Outline Drawing
FEATURES
Low noise figure @ f=25.
2GHz NFmin.
= 2.
4dB (Typ.
) High associated gain @ f=25.
2GHz Gs = 10.
0dB (Typ.
)
Fig.
1
APPLICATION
K band low noise
amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=1.
5V, VGS=0V
ORDERRING INFORMATION
Tape & reel 4000pcs.
/reel
www.
DataSheet.
net/
RoHS COMPLIANT...