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/2006
MITSUBISHI SEMICONDUTOR GaAs FET
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure @ f=20GHz NFmin.
= 0.
55dB (Typ.
) High associated gain @ f=20GHz Gs = 10.
5dB (Typ.
)
Fig.
1
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
APPLICATION
C to K band low noise
amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 300...