C band internally matched power GaAs FET
MGFC36V5258
5.
2 – 5.
8 GHz BAND / 4W
DESCRIPTION
The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.
2 – 5.
8 GHz band
amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=4W (TYP.
) @f=5.
2 – 5.
8GHz High power gain
GLP=10dB (TYP.
) @f=5.
2 – 5.
8GHz High power added efficiency
P.
A.
E.
=32% (TYP.
) @f=5.
2 – 5.
8GHz
APPLICATION
5.
2 – 5.
8 GHz band power amplifier
QUALITY
IG
2MIN
12.
9 +/-0.
2
2MIN
OUTLINE DRAW ING Unit : millimeters
21.
0 +/-0.
3 (1) 0.
6 +/-0.
15
(2) (2) R-1.
6
(3) 10.
7 ...