C band internally matched power GaAs FET
MGFC40V6472
6.
4 – 7.
2 GHz BAND / 10W
DESCRIPTION
The MGFC40V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.
4 – 7.
2 GHz band
amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=10W (TYP.
) @f=6.
4 – 7.
2GHz High power gain
GLP=9dB (TYP.
) @f=6.
4 – 7.
2GHz High power added efficiency
P.
A.
E.
=32% (TYP.
) @f=6.
4 – 7.
2GHz Low distortion [item -51]
IM3=-45dBc (TYP.
) @Po=29dBm S.
C.
L
APPLICATION
item 01 : 6.
4 – 7.
2 GHz band power amplifier item 51 : 6.
4 – 7.
2 GHz band digital radio communic...