C band internally matched power GaAs FET
MGFC41V3642
3.
6 – 4.
2 GHz BAND / 14W
DESCRIPTION
The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.
6 – 4.
2 GHz band
amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=14W (TYP.
) @f=3.
6 – 4.
2GHz High power gain
GLP=12.
5dB (TYP.
) @f=3.
6 – 4.
2GHz High power added efficiency
P.
A.
E.
=40% (TYP.
) @f=3.
6 – 4.
2GHz Low distortion [item -51]
IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L
APPLICATION
item 01 : 3.
6 – 4.
2 GHz band power amplifier item 51 : 3.
6 – 4.
2 GHz band digital radio commu...