C band internally matched power GaAs FET
MGFC42V5258
5.
2 – 5.
8 GHz BAND / 16W
DESCRIPTION
The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.
2 – 5.
8 GHz band
amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system • High output power
P1dB=16W (TYP.
) @f=5.
2 – 5.
8GHz • High power gain
GLP=9.
0dB (TYP.
) @f=5.
2 – 5.
8GHz • High power added efficiency
P.
A.
E.
=31% (TYP.
) @f=5.
2 – 5.
8GHz • Low distortion [item -51]
IM3=-45dBc (Typ.
) @Po=32dBm S.
C.
L
4.
2±0.
3
APPLICATION
• item 01 : 5.
2 – 5.
8GHz band microwave high power amplifier • item 51 : 5.
2 – 5.
8GHz band digital radio...