C band Internally Matched Power GaAs FET
MGFC47B3538B
3.
5 – 3.
8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.
5 – 3.
8 GHz band
amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE DRAWING
FEATURES
Crass AB operation Internally matched to 50(ohm) High output power: Po(SAT) = 50 W (typ.
) High power gain: GP = 10 dB (TPE.
) @Po = 37dBm Distortion: EVM = 2.
0% (TPE.
) @ Po = 37dBm
Recommended Bias Condition
Vd = 12(V) ID = 1.
5 (A) Rg = 10 ohm
GF-60
www.
DataSheet.
net/
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO MAXID PT *1 Tch Tstg
*1 : Tc=25deg.
C
(Ta=25deg.
C)...