L/S band internally matched power GaAs FET
MGFS52BN2122A
2.
1 – 2.
2 GHz BAND / 160W
DESCRIPTION
The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.
1 – 2.
2GHz band
amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Push-pull configuration High output power
Pout=160W (TYP.
) @f=2.
17GHz High power gain
GLP=12.
0dB (TYP.
) @f=2.
17GHz High power added efficiency
P.
A.
E.
=48% (TYP.
) @f=2.
17GHz
APPLICATION
2.
1-2.
2GHz band power amplifier for W-CDMA Base Station
QUALITY
IG
OUTLINE
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=4.
0A RG=5ohm for each gate
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
...