MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability.
Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high
frequencies.
Co–packaged IGBTs save space, reduce assembly
time and cost.
This new E...