MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high
voltage–blocking capability.
Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high frequencies.
This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
• • • • • • Industry Standard TO–220 ...