MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over–
Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection • Low Threshold
Voltage to Interface Power Loads to Logic or
Microprocessor Devices • Low Saturation
Voltage • High Pulsed Current Capability
Order this document by MGP15N38CL/D
MGP15N38CL
15 AMPERES N–CHANNEL IGBT
VCE(on) = 1.
8 V 380 VOLTS CLAMPED
C
G GC
E
CASE 221A–09 STYLE 9 TO–220AB
E
MAXIM...