MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP20N14CL/D
Product Preview
IGBT
SMARTDISCRETES™ Internally Clamped, N-Channel
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector over
voltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold
Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation
Voltage • High Pulsed Current Capability
MGP20N14CL
20 AMPERES
VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.
9 VOLTS 135 VOLTS (CLAMPED)
®
C...