MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advanced Information
IGBT
SMARTDISCRETES™ Internally Clamped, N-Channel
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector over
voltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold
Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation
Voltage • High Pulsed Current Capability
MGP20N35CL
20 AMPERES
VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.
8 VOLTS 350 VOLTS (CLAMPED...