MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high
voltage–blocking capability.
It also provides fast switching characteristics and results in efficient operation at high frequencies.
• • • • • Industry Standard TO–220 Package High Speed Eoff: 67 mJ/A typical at 125°C Low On–
Voltage – 1.
7 V typical at 10 A, 125°C Robust High
Voltage Termination ESD Protection Gate–Emitter Zener Diodes
MGP20N60U
IGBT IN TO–220 20 A @ 90°C 31 A @ 25°C 600 VOLTS VERY LOW ON–V...