Insulated Gate Bipolar Transistor with Anti-Parallel Diode
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced...
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