Chip Integration Technology Corporation
MHU07N65
Silicon N-Channel Power
MOSFET
Main Product Characteristics
ID VDSS PD(TC=25oC) RDS(ON)Typ
7A 650V 95W 1.
1Ω
■ Features
• Fast switching.
• ESD improved capability.
• Low gate charge.
(Typical Data:24nC) • Low reverse transfer capacitances.
(Typical:4.
5pF) • 100% single pulse avalanche energy test.
■ Application
• Power switch circuit of adaptor and charger.
■ Outline TO-251
12 3
1.
Gate 2.
Drain 3.
Source
Drain
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over
passivated chip • Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Gate
Source Inner Equivalent principium C...