DC COMPONENTS CO.
, LTD.
R
MID112
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and
amplifiers.
TO-251
.
268(6.
80) .
252(6.
40) .
217(5.
50) .
205(5.
20) 2
Pinning
1 = Base 2 = Collector 3 = Emitter
.
022(0.
55) .
018(0.
45) .
063(1.
60) .
055(1.
40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.
284(7.
20) .
268(6.
80)
Symbol VCBO VCEO...