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DC COMPONENTS CO.
, LTD.
R
MID31C
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and switching applications.
TO-251
Pinning
1 = Base 2 = Collector 3 = Emitter
.
268(6.
80) .
252(6.
40) .
217(5.
50) .
205(5.
20) 2
.
022(0.
55) .
018(0.
45) .
063(1.
60) .
055(1.
40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.
284(7.
20) .
268(6.
80)
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 100 100 5 3 15 +150 -55 to +150
Unit V V V A ...