isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= -90V(Min.
) ·High DC Current Gain-
: hFE= 1000(Min.
)@IC= -25A : hFE= 400(Min.
)@IC= -50A ·Complement to the NPN MJ11030 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
MJ11031
APPLICATIONS ·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-90
V
VCEO
Collector-Emitter
Voltage
-90
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continunous
-50
A
ICM
Collector Current-Peak
-100
A
IB
Base Curre...