isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain ·Wide Area of Safe Operation ·Complement to the PNP MJ15002 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio,disk head positioners and
other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
140
V
VCEO
Collector-Emitter
Voltage
140
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
5
A
PD
Total Power Dissipation@TC=25℃
200
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200...