isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
MJ15019
DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB PD
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation
-200
V
-200
V
-7
V
-4
A
-2
A
150
W
Tj
Max.
Junction Temperatur...