isc Silicon PNP Power Transistor
DESCRIPTION ·High current capability ·High power dissipation ·Complement to the NPN MJ15026 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio power amplifier ·DC to DC converter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-200
V
VCEO
Collector-Emitter
Voltage
-200
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-16
A
PD
Total Power Dissipation@TC=25℃
250
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-50~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal ...