isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 300V(Min.
) ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.
8 V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium to high
voltage inverters, converters, regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
300
V
VCEO Collector-Emitter
Voltage
300
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current
10
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ, Tstg
Operating and Storage...