isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector-Emitter Saturation
Voltage
: VCE(sat)= 1.
0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for general pourpose power amplification and
switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter
Voltage
-80
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Collect...