MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
The main advantages brought by these new transistors are: • • • • Improved Global Efficiency Due to the Low Base Drive Requirements DC Current Gain Typically Centered at 45 Extremely Low Storage Time Variation, Thanks to the Antisaturation Network Easy to Use Thanks to the Integrated Col...

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